Fabrication of high IcRn YBCO ramp junctions using Ga doped Pr-Ba-Cu-O barriers at 65 K

Author

Hu, R. ; Chan, H.W. ; Murduck, J.M. ; Sergant, M. ; Pettiette-Hall, C.L. ; Bulman, J. ; Luine, J.L.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

3129

Lastpage

3132

Abstract

Yttrium Barium Copper Oxide ramp junctions have been fabricated via off-axis rf magnetron sputtering using Praseodymium Barium Copper Gallium Oxide as a barrier material. Optimal wafer processing conditions and junction behavior as a function of barrier thickness are presented. IcRn values of 500 microvolts at 65 K have been achieved with a two step deposition/anneal process using Praseodymium Barium Copper Gallium Oxide as the barrier. This junction process has been demonstrated on 2 inch wafers.

Keywords

Josephson effect; annealing; barium compounds; high-temperature superconductors; praseodymium compounds; sputtered coatings; superconducting thin films; yttrium compounds; 65 K; Ga doped Pr-Ba-Cu-O barrier; Josephson junction; RF magnetron sputtering; YBCO ramp junction; YBaCuO-PrBaCuO:Ga; annealing; critical current-normal resistance product; fabrication; thin film deposition; wafer processing; Conductivity; Critical current; Etching; Fabrication; Gallium; Guns; Magnetic materials; Substrates; Tunneling; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783692

Filename

783692