High-Performance n-Channel Organic Thin-Film Transistor for CMOS Circuits Using Electron-Donating Self-Assembled Layer

Author

Kim, Sung Hoon ; Lee, Sun Hee ; Jang, Jin

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

31

Issue

9

fYear

2010

Firstpage

1044

Lastpage

1046

Abstract

We introduce an electron-donating self-assembled monolayer (SAM) to improve the performance of solution-processed n-channel organic thin-film transistor (OTFT) using an organic semiconductor (OS) of an N, N^´ bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8CN₂). The OTFTs without SAM, with electron-withdrawing, and electron-donating layers, exhibited field-effect mobility of 0.02, 0.01, and 0.33 cm²/(V·s), respectively. The electron-donating thiophenol layer on source/drain electrodes shows a small injection barrier of 0.05 eV to the n-type OS and thus, exhibited field-effect mobility of 0.33 cm²/(V·s) and threshold voltage of -1.1 V.

Keywords

CMOS integrated circuits; organic semiconductors; self-assembly; thin film transistors; CMOS circuits; electron-donating self-assembled layer; electron-withdrawing layers; high-performance n-channel organic thin-film transistor; organic semiconductor; Circuits; Contact resistance; Displays; Electrodes; Electrons; Gold; Organic semiconductors; Organic thin film transistors; Thin film transistors; Threshold voltage; $hbox{PDI-8CN}_{2}$; n-type; organic thin-film transistor (OTFT); self-assembled monolayer (SAM); solution process;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2052092

Filename

5512661