Title :
Integration of ALD barrier and CVD Ru liner for void free PVD Cu reflow process on sub-10nm node technologies
Author :
Yu, Kaiyuan ; Oie, T. Hasegawa M. ; Amano, F. ; Consiglio, S. ; Wajda, C. ; Maekawa, Keiichi ; Leusink, G.
Author_Institution :
TEL Technol. Center, America LLC, Albany, NY, USA
Abstract :
Cu-fill extendability is demonstrated with a novel integration scheme using clustered ALD barrier, CVD Ru liner and PVD Cu dry-fill processes. ALD barrier films were developed and integrated with a 2nm CVD-Ru (replacing the traditional PVD Ta and PVD Cu seed), and a single-step PVD Cu dry-fill process for bottom-up via and trench fill. Line resistance and barrier integrity data complement the Cu-fill performance.
Keywords :
atomic layer deposition; chemical vapour deposition; copper; integrated circuit interconnections; integrated circuit metallisation; ruthenium; ALD barrier; CVD liner; Cu; Ru; atomic layer deposition; chemical vapor deposition; dry fill process; physical vapor deposition; size 2 nm; void free PVD reflow process; Annealing; Dielectrics; Electrical resistance measurement; Films; Metallization; Resistance;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831857
