Title :
Synthesis and PEALD evaluation of new Nickel precursors
Author :
Gatineau, Satoko ; Changhee Ko ; Gatineau, Julien ; Lansalot-Matras, Clement ; Chang-Fang Hsiao
Author_Institution :
Air Liquide Labs., Tsukuba, Japan
Abstract :
A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].
Keywords :
electrical resistivity; metallic thin films; nickel; plasma CVD; H2-NH3 reducing agent; Ni; Ni metal film; Ni(allyl)(PCAI-iPr); PEALD evaluation; [Ni(allyl)(PCAI-R)]; alkyl-pyrrolylimine ligands; allyl-pyrrolylimine ligands; fluorine free nickel precursors; oxygen free nickel precursors; plasma enhanced ALD; resistivity; resistivity 5 muohmcm to 10 muohmcm; temperature 400 degC; thermal enhanced ALD; Conductivity; Films; Nickel; Plasmas; Silicides; Silicon;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831859
