• DocumentCode
    154224
  • Title

    Synthesis and PEALD evaluation of new Nickel precursors

  • Author

    Gatineau, Satoko ; Changhee Ko ; Gatineau, Julien ; Lansalot-Matras, Clement ; Chang-Fang Hsiao

  • Author_Institution
    Air Liquide Labs., Tsukuba, Japan
  • fYear
    2014
  • fDate
    20-23 May 2014
  • Firstpage
    125
  • Lastpage
    126
  • Abstract
    A new family of oxygen and fluorine free Nickel (Ni) precursors, which are based on allyl and alkylpyrrolylimine ligands [Ni(allyl)(PCAI-R)], has been developed and evaluated for a Ni metal film with thermal and plasma enhanced ALD using H2/NH3 as a reducing agent. From Ni(allyl)(PCAI-iPr), pure Ni film with very low resistivity (5.3 μO·cm) was obtained at 400°C by PEALD, which is close to the resistivity value of bulk Nickel (5-10 μO·cm) [1].
  • Keywords
    electrical resistivity; metallic thin films; nickel; plasma CVD; H2-NH3 reducing agent; Ni; Ni metal film; Ni(allyl)(PCAI-iPr); PEALD evaluation; [Ni(allyl)(PCAI-R)]; alkyl-pyrrolylimine ligands; allyl-pyrrolylimine ligands; fluorine free nickel precursors; oxygen free nickel precursors; plasma enhanced ALD; resistivity; resistivity 5 muohmcm to 10 muohmcm; temperature 400 degC; thermal enhanced ALD; Conductivity; Films; Nickel; Plasmas; Silicides; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4799-5016-4
  • Type

    conf

  • DOI
    10.1109/IITC.2014.6831859
  • Filename
    6831859
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=154224