Title :
Fabrication of superconducting delay line with GaAs Schottky diode
Author :
Koh, K. ; Hohkawa, K.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kanagawa Inst. of Technol., Japan
fDate :
6/1/1999 12:00:00 AM
Abstract :
We improved the fabrication process of superconductor/semiconductor devices based on epitaxial liftoff (ELO) technology by using polyimide film in place of Apiezon wax. We investigated the process conditions and fabricated basic GaAs devices. We also succeeded in bonding a GaAs Metal-Semiconductor-Metal photodiode on YBCO micro-strip-line that is formed on an SrTiO/sub 3/ substrate. The basic characteristics of this photodiode are measured and the results have confirmed that the ELO process using polyimide film is feasible for fabricating superconductor/semiconductor functional devices.
Keywords :
III-V semiconductors; Schottky diodes; barium compounds; delay lines; gallium arsenide; high-temperature superconductors; microstrip lines; photodiodes; semiconductor epitaxial layers; superconductor-semiconductor boundaries; yttrium compounds; GaAs; GaAs Schottky diode; GaAs metal-semiconductor-metal photodiode; SrTiO/sub 3/; SrTiO/sub 3/ substrate; YBCO microstrip line; YBaCuO; epitaxial liftoff; fabrication technology; polyimide film; superconducting delay line; superconductor-semiconductor device; Delay lines; Fabrication; Gallium arsenide; Photodiodes; Polyimides; Schottky diodes; Semiconductor films; Superconducting devices; Superconducting epitaxial layers; Superconducting films;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
