Fabrication of superconducting delay line with GaAs Schottky diode

Author

Koh, K. ; Hohkawa, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Kanagawa Inst. of Technol., Japan

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

3224

Lastpage

3227

Abstract

We improved the fabrication process of superconductor/semiconductor devices based on epitaxial liftoff (ELO) technology by using polyimide film in place of Apiezon wax. We investigated the process conditions and fabricated basic GaAs devices. We also succeeded in bonding a GaAs Metal-Semiconductor-Metal photodiode on YBCO micro-strip-line that is formed on an SrTiO/sub 3/ substrate. The basic characteristics of this photodiode are measured and the results have confirmed that the ELO process using polyimide film is feasible for fabricating superconductor/semiconductor functional devices.

Keywords

III-V semiconductors; Schottky diodes; barium compounds; delay lines; gallium arsenide; high-temperature superconductors; microstrip lines; photodiodes; semiconductor epitaxial layers; superconductor-semiconductor boundaries; yttrium compounds; GaAs; GaAs Schottky diode; GaAs metal-semiconductor-metal photodiode; SrTiO/sub 3/; SrTiO/sub 3/ substrate; YBCO microstrip line; YBaCuO; epitaxial liftoff; fabrication technology; polyimide film; superconducting delay line; superconductor-semiconductor device; Delay lines; Fabrication; Gallium arsenide; Photodiodes; Polyimides; Schottky diodes; Semiconductor films; Superconducting devices; Superconducting epitaxial layers; Superconducting films;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783715

Filename

783715