Novel method for fabricating deep submicron Nb/AlO/sub x//Nb tunnel junctions based on spin-on glass planarization

Author

Pavolotsky, A.B. ; Weimann, T. ; Scherer, H. ; Niemeyer, J. ; Zorin, A.B. ; Krupenin, V.A.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

3251

Lastpage

3254

Abstract

A novel method for the fabrication of sub-1-/spl mu/m Nb/AlO/sub x//Nb tunnel junctions has been developed, that is based on spin-on glass planarization. The Nb/AlO/sub x//Nb sandwich and the Nb wiring layer are structured by reactive ion etching using e-beam lithography. The insulation between the base electrode and the wiring layer is realized by planarised spin-on glass. Single electron transistors with junction areas of 0.3 /spl mu/m/spl times/0.3 /spl mu/m and linear arrays of junctions with sizes down to 0.5 /spl mu/m/spl times/0.5 /spl mu/m have been fabricated and measured.

Keywords

Josephson effect; aluminium compounds; niobium; single electron transistors; superconducting arrays; superconducting transistors; surface treatment; Nb-AlO-Nb; deep submicron Nb/AlO/sub x//Nb tunnel junction; electron beam lithography; fabrication; linear array; reactive ion etching; single electron transistor; spin-on-glass planarization; Electrodes; Etching; Fabrication; Glass; Insulation; Lithography; Niobium; Planarization; Single electron transistors; Wiring;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783722

Filename

783722