• DocumentCode
    1542576
  • Title

    Mechanisms controlling interface-properties in high-T/sub c/ superconductors

  • Author

    Hilgenkamp, H. ; Mannhart, J.

  • Author_Institution
    Inst. fur Phys., Augsburg Univ., Germany
  • Volume
    9
  • Issue
    2
  • fYear
    1999
  • fDate
    6/1/1999 12:00:00 AM
  • Firstpage
    3405
  • Lastpage
    3408
  • Abstract
    Influences of the predominant d(x/sup 2/-y/sup 2/)-symmetry of the order parameter and of bending of the electronic band structure on the superconducting and normal state transport characteristics of interfaces involving high-T/sub c/ superconductors are discussed. It will be shown that these generic properties of the high-T/sub c/ cuprates are important factors for many characteristic aspects of interfaces in these materials, such as the angular dependencies of the critical current density, the normal state resistivity and consequently the I/sub c/R/sub n/-product of grain boundaries, the comparatively large contact-resistances between superconductors and normal-metals, and the small values of the Stewart-McCumber parameter /spl beta//sub c/ leading to the overdamped current-voltage characteristics.
  • Keywords
    band structure; contact resistance; critical current density (superconductivity); grain boundaries; high-temperature superconductors; superconducting thin films; I/sub c/R/sub n/-product; Stewart-McCumber parameter; angular dependencies; contact resistance; critical current density; d(x/sup 2/-y/sup 2/)-symmetry; electronic band structure; grain boundaries; high-T/sub c/ superconductors; normal state resistivity; order parameter; overdamped current-voltage characteristics; transport characteristics; Conductivity; Critical current density; Grain boundaries; Magnetic anisotropy; Perpendicular magnetic anisotropy; Physics; Superconducting magnets; Superconducting materials; Superconducting thin films; Superconductivity;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.783760
  • Filename
    783760