Title :
Unique nondestructive inline metrology of TSVs by X-ray with model based library method
Author :
Umehara, Yasutoshi ; Wen Jin
Author_Institution :
Tokyo Electron Inc., Fuchu, Japan
Abstract :
Unique nondestructive inline profile metrology of through-Silicon via (TSV) for 3D integrated circuits in production processes such as ultra-deep etching and Cu pillar forming process was introduced. We tried to measure the depth profile of TSVs from X-ray images with a tilted angle by applying model based library method. The fairly good repeatability in critical dimensions (CDs) and the depths (<;100nm, <;200nm respectively) and good correlation in CDs with results from SEM measurement were obtained, and good robustness under low SNR ~2 of the images was confirmed.
Keywords :
X-ray microscopy; copper; etching; integrated circuit interconnections; integrated circuit measurement; scanning electron microscopy; spatial variables measurement; three-dimensional integrated circuits; 3D integrated circuits; Cu; SEM measurement; TSV; X-ray images; critical dimensions; depth profile measurement; model based library method; nondestructive inline profile metrology; pillar forming process; through-silicon-via; ultra-deep etching; Correlation; Image resolution; Libraries; Mathematical model; Metrology; Through-silicon vias; X-ray imaging;
Conference_Titel :
Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2014 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4799-5016-4
DOI :
10.1109/IITC.2014.6831877
