Title :
The waveform degradation in VLSI interconnections
Author :
Abuelma´atti, Muhammad Taher
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ., Isa Town
fDate :
8/1/1990 12:00:00 AM
Abstract :
A simple model for the transfer characteristic of an infinitely long resistive-capacitive (RC) distributed transmission line is presented. This model is used to obtain the time-domain response for a ramp function driving the RC distributed line. This model can be used for studying the effect of the line´s electrical parameters on its transient response and can be easily implemented for computer-aided analysis of VLSI circuits
Keywords :
VLSI; semiconductor device models; transfer functions; transient response; transmission line theory; RC distributed line; VLSI circuits; VLSI interconnections; computer-aided analysis; electrical parameters; ramp function; time-domain response; transfer characteristic; transient response; transmission line model; waveform degradation; CMOS logic circuits; CMOS technology; Circuit testing; Degradation; Electrons; Integrated circuit interconnections; Integrated circuit testing; Semiconductor device modeling; Very large scale integration; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
