Title :
A 1-GHz charge-packet replicator/subtractor circuit for GaAs CCD signal processing
Author :
Colbeth, Richard E. ; Fossum, Eric R.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
8/1/1990 12:00:00 AM
Abstract :
A novel charge-packet replicator/subtractor circuit based on GaAs charge-coupled device (CCD) technology is described. The circuit exhibits linear gain of 0.989 operating at 1-GHz replication frequency, while consuming only several milliwatts of dynamic power. Experimental results for a prototype circuit operating over the frequency range of 1 MHz to 1 GHz are presented. Due to the low parasitic capacitance of the GaAs semi-insulating substrate, the gain is linear and nearly unity. The chip area required for the circuit consists of several CCD gates and a small MESFET. Based on C-V measurements, the dynamic power consumed for the replication/subtraction process (operating with 5-V clock swings) is estimated to be on the order of several milliwatts at 1 GHz where the operation takes place in 1 ns. Design constraints are outlined and compared to experimental results in an effort to explore the tradeoff between speed and gain. The circuit is shown to be relatively insensitive to the precise voltages used during operation
Keywords :
III-V semiconductors; charge-coupled device circuits; gallium arsenide; signal processing equipment; 1 MHz to 1 GHz; 1 ns; C-V measurements; CCD signal processing; GaAs; MESFET; charge-coupled device; charge-packet replicator/subtractor circuit; linear gain; semi-insulating substrate; Charge coupled devices; Clocks; Frequency; Gain; Gallium arsenide; MESFET circuits; Parasitic capacitance; Power measurement; Prototypes; Semiconductor device measurement;
Journal_Title :
Solid-State Circuits, IEEE Journal of