Experimental behavior of a two-chip charge amplifier for high-stability spectroscopy systems

Author

Sampietro, Marco ; Guazzoni, Chiara ; Cruciata, Hermes ; Lechner, Peter

Author_Institution

Dipartimento di Elettronica a Inf., Politecnico di Milano, Italy

Volume

48

Issue

4

fYear

2001

fDate

8/1/2001 12:00:00 AM

Firstpage

1229

Lastpage

1233

Abstract

We present the first experimental characterization of an innovative two-chip detector system for X-ray spectroscopy experiments in which stability of operation is mandatory to avoid on-line calibration procedures. The system is based on a silicon drift detector and on a charge amplifier partly integrated in the detector chip. The design guidelines of both the “detector chip” produced on a high resistivity substrate and the “amplifier chip” designed in 0.8-μm BiCMOS technology are reviewed. The proper functionality of each of the two chips and the performance of the whole system have been experimentally verified

Keywords

BiCMOS integrated circuits; X-ray spectroscopy; nuclear electronics; pulse amplifiers; silicon radiation detectors; 0.8 micron; BiCMOS; Si; Si drift detector; X-ray spectroscopy; amplifier chip; detector chip; stability; two-chip charge amplifier; BiCMOS integrated circuits; Detectors; Energy resolution; Face detection; Operational amplifiers; Parasitic capacitance; Silicon; Spectroscopy; Stability; X-ray detection;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.958756

Filename

958756