Comments on `A compact thermal noise model for the investigation of soft error rates in MOS VLSI digital circuits´

Author

Kolodziejski, Jerzy F. ; Spiralski, Ludwik

Author_Institution

Inst. of Electron. Technol., Warsaw, Poland

Volume

25

Issue

4

fYear

1990

fDate

8/1/1990 12:00:00 AM

Firstpage

1039

Abstract

For the original article see ibid., vol.24, no.1, p.78-89 (1989). In the above-title paper by P.D. Layman and S.G. Chamberlain, the mean-square noise voltage of a MOSFET transistor was determined in the frequency range Δf=2.2/(2πt_sen)=0.35(1/t _sen), whereas the mean-square value (and consequently the RMS) of thermal noise in the RC circuit was determined over an infinite frequency range. The commenter examines the implications of this approach to draw attention to a few questions that can significantly influence the accuracy of results in the course of consideration of noise in electronic circuits

Keywords

MOS integrated circuits; VLSI; digital integrated circuits; electron device noise; errors; semiconductor device models; thermal noise; MOS VLSI digital circuits; MOSFET transistor; RMS; compact thermal noise model; mean-square noise voltage; soft error rates; Bandwidth; Capacitors; Circuit noise; Decoding; Error analysis; Frequency; Signal to noise ratio; Very large scale integration; Viterbi algorithm; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.58304

Filename

58304