Title :
Single-electron transistors based on Al/AlO/sub x//Al and Nb/AlO/sub x//Nb tunnel junctions
Author :
Bluthner, K. ; Gotz, M. ; Hadicke, A. ; Krech, W. ; Wagner, T. ; Muhlig, H. ; Fuchs, H.-J. ; Hubner, U. ; Schelle, D. ; Kley, E.-B. ; Fritzsch, L.
Author_Institution :
Friedrich-Schiller-Univ., Jena, Germany
fDate :
6/1/1997 12:00:00 AM
Abstract :
As an alternative to the shadow evaporation method for the preparation of ultrasmall tunnel junctions we have established the so-called self-aligned in-line technique. It was applied to the fabrication of common Al/AlO/sub x//Al-type and, for the first time, Nb/AlO/sub x//Nb-based single-electron transistors. The characterization of the samples at temperatures in the range of a few hundred millikelvins reveals charging effects (Coulomb blockade and gate modulation) of the quasiparticle current.
Keywords :
Josephson effect; aluminium; aluminium compounds; electron beam lithography; niobium; quantum interference phenomena; single electron transistors; superconducting device testing; superconducting transistors; superconductor-insulator-superconductor devices; 150 mK; 300 mK; Al-AlO-Al; Al/AlO/sub x//Al tunnel junctions; Coulomb blockade; Nb-AlO-Nb; Nb/AlO/sub x//Nb tunnel junctions; SAIL process; charging effects; electron beam lithography; gate modulation; quasiparticle current; self-aligned in-line technique; single-electron transistors; ultrasmall tunnel junctions; Artificial intelligence; Capacitance; Electrodes; Fabrication; Josephson junctions; Niobium; Quantization; Single electron transistors; Superconducting materials; Temperature distribution;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
