Title :
256×256 hybrid HgCdTe infrared focal plane arrays
Author :
Bailey, Robert B. ; Kozlowski, Lester J. ; Chen, Jenkon ; Bui, Duc Q. ; Vural, Kadri ; Edwall, Dennis D. ; Gil, R. Victor ; Vanderwyck, A. Ben ; Gertner, Edward R. ; Gubala, Michael B.
Author_Institution :
Rockwell Int. Sci. Center, Thousands Oaks, CA, USA
fDate :
5/1/1991 12:00:00 AM
Abstract :
Hybrid HgCdTe 256×256 focal plane arrays have been developed to meet the sensitivity, resolution, and field-of-view requirements of high-performance medium-wavelength infrared (MWIR) imaging systems. The detector arrays for these hybrids are fabricated on substrates that reduce or eliminate the thermal expansion mismatch to the silicon readout circuit. The readouts are foundry-processed CMOS switched-FET circuits that have charge capacities greater than 107 electrons and a single video output capable of 20-MHz data rates. The high quantum efficiency, tunable absorption wavelength, and broad operating temperature range of these large HgCdTe staring focal plane arrays give them significant advantages over competing sensors. The mature Producible Alternative to CdTe for Epitaxy-1 (PACE-1) technology, using sapphire detector substrates, has demonstrated 256×256 MWIR arrays with mean laboratory noise equivalent temperature difference (NETD) of 9 mK for a 4.9-μm cutoff wavelength, 40-μm pixel size, and 80-K operating temperature. RMS detector response nonuniformities are less than 4%, and pixel yields are greater than 99%. The newly developed PACE-3 process uses silicon for the detector substrate to eliminate completely the thermal mismatch with the silicon readout circuit. It has the potential for similar performance in even larger array sizes. A 640×480 hybrid array is under development
Keywords :
CMOS integrated circuits; II-VI semiconductors; cadmium compounds; hybrid integrated circuits; image sensors; infrared imaging; mercury compounds; silicon; 20 MHz; 256 pixel; 4.9 micron; 40 micron; 65536 pixel; 80 K; CMOS switched-FET circuits; HgCdTe infrared focal plane arrays; MWIR arrays; MWIR imagers; PACE-1; Si substrate; charge capacities; cutoff wavelength; data rates; field-of-view; hybrid focal plane arrays; medium-wavelength infrared; operating temperature; operating temperature range; pixel size; pixel yields; quantum efficiency; resolution; semiconductors; sensitivity; single video output; staring focal plane arrays; thermal expansion mismatch; thermal mismatch; tunable absorption wavelength; Circuits; Detectors; High-resolution imaging; Image resolution; Infrared imaging; Optical imaging; Sensor arrays; Silicon; Substrates; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on