Title :
Modeling and Analysis of Transistor Mismatch Due to Variability in Short-Channel Effect Induced by Random Dopant Fluctuation
Author :
Butt, Nauman Z. ; Johnson, Jeffrey B.
Author_Institution :
Microelectron. Div., Semicond. R&D Center, IBM, Hopewell Junction, NY, USA
Abstract :
Transistor mismatch due to variability in short-channel effects induced by random dopant fluctuation is modeled in the light of 32-nm HKMG SOI dense SRAM bit-cell data. We present a simple analytical approach to model and characterize the mismatch increase in saturation relative to the linear mode. The increased mismatch in saturation can be mitigated by optimizing the choice of halo and well implants for channel doping.
Keywords :
SRAM chips; semiconductor doping; silicon-on-insulator; HKMG SOI dense SRAM bit-cell data; channel doping; linear mode; random dopant fluctuation; short-channel effect; size 32 nm; transistor mismatch analysis; transistor mismatch modeling; Analytical models; Data models; Doping; Implants; Random access memory; Semiconductor process modeling; Transistors; MOSFETs; Mismatch; short-channel effect;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2199075
