LWIR 128×128 GaAs/AlGaAs multiple quantum well hybrid focal plane array

Author

Kozlowski, Lester J. ; Williams, George M. ; Sullivan, Gerard J. ; Farley, Craig W. ; Anderson, Robert J. ; Chen, Jenkon ; Cheung, Derek T. ; Tennant, William E. ; DeWames, Roger E.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1124

Lastpage

1130

Abstract

The authors describe the fabrication and performance of a new type of hybrid focal plane array (FPA). The hybrid consists of a 128×128 GaAs/AlGaAs superlattice multiple-quantum-well detector array with peak response at 7.7 μm mated to a high-performance CMOS readout with direct injection input. The quantum-well infrared photodetector (QWIP) array was fabricated by molecular-beam epitaxy (MBE). Optical gratings were excluded to facilitate evaluation of the basic detector-technology. The mean D* at 78 K was 5.76×10⁹ cm-√Hz/W. Total FPA 1/f noise was negligible, as corroborated by imagery having minimum resolvable temperature (MRT) of 30 mK at 0.07 cycles/mrad. No gain nonuniformity correction was used in the imaging demonstration

Keywords

III-V semiconductors; aluminium compounds; electron device noise; gallium arsenide; image sensors; infrared detectors; infrared imaging; molecular beam epitaxial growth; photodetectors; 1/f noise; 16384 pixel; 7.7 micron; CMOS readout; FPA; GaAs-AlGaAs superlattice; MBE; MQW detector array; direct injection input; fabrication; hybrid focal plane array; long wavelength spectral region; molecular-beam epitaxy; multiple quantum well; quantum-well infrared photodetector; Detectors; Fabrication; Gallium arsenide; Gratings; Molecular beam epitaxial growth; Optical noise; Optical superlattices; Photodetectors; Quantum well devices; Sensor arrays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78388

Filename

78388