Title :
Low power 20 Gbit/s data decision and 17 GHz static frequency divider ICs with 1.5 V supply voltage
Author :
Lao, Z. ; Berroth, M. ; Thiede, A. ; Rieger-Motzer, M. ; Kaufel, G. ; Seibel, J. ; Bronner, W. ; Hulsmann, A. ; Schneider, J. ; Raynor, B.
Author_Institution :
Fraunhofer-Inst. of Appl. Phys., Freiburg, Germany
fDate :
2/13/1997 12:00:00 AM
Abstract :
A data decision and a static frequency divider in source coupled FET logic with a supply voltage of 1.5 V have been designed and fabricated. Both circuits, using 0.2 μm gate length enhancement and depletion AlGaAs-GaAs HEMTs (fT=60/55 GHz), operate up to 20 Gbit/s and 17 GHz. The power consumption is 24 and 21 mW for the data decision circuit and the static frequency divider together with the output buffer, respectively
Keywords :
HEMT integrated circuits; III-V semiconductors; aluminium compounds; data communication equipment; decision circuits; digital communication; field effect logic circuits; frequency dividers; gallium arsenide; optical communication equipment; 0.2 micron; 1.5 V; 17 GHz; 20 Gbit/s; 21 mW; 24 mW; AlGaAs-GaAs; AlGaAs-GaAs HEMT; HEMT IC; SCFL; data decision IC; depletion devices; enhancement devices; source coupled FET logic; static frequency divider IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970180
