DocumentCode :
1543455
Title :
Characteristics of photoelastic waveguides in SiGe/Si heterostructures
Author :
Lea, E. ; Weiss, B.L.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Volume :
33
Issue :
4
fYear :
1997
fDate :
2/13/1997 12:00:00 AM
Firstpage :
292
Lastpage :
293
Abstract :
Singlemode photoelastic stripe waveguides with excess losses of ~2.7 dB cm-1 at a wavelength of 1.523 μm fabricated in SiGe/Si planar heterostructure waveguides using Si3N4 stressor layers are reported
Keywords :
Ge-Si alloys; optical planar waveguides; photoelasticity; semiconductor heterojunctions; semiconductor materials; 1.523 micron; Si3N4; Si3N4 stressor layer; SiGe-Si; SiGe/Si planar heterostructure; excess loss; single-mode photoelastic stripe waveguide;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970206
Filename :
583482
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1543455
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