• DocumentCode
    1543485
  • Title

    Oxidation of AlGaAs layers for tapered apertures in vertical-cavity lasers

  • Author

    Naone, R.L. ; Hegblom, E.R. ; Thibeault, B.J. ; Coldren, L.A.

  • Volume
    33
  • Issue
    4
  • fYear
    1997
  • fDate
    2/13/1997 12:00:00 AM
  • Firstpage
    300
  • Lastpage
    301
  • Abstract
    By using step-graded Al compositions of epitaxial AlGaAs, we can form a tapered oxidation front due to the combination of rapid lateral oxidation in a higher AI content layer and slow transverse oxidation into adjacent lower Al content layers. A study of the oxidation behaviour of this epitaxial aperture layer demonstrates the feasibility of tapered dielectric apertures which have been predicted to provide much lower losses in vertical cavity lasers
  • Keywords
    laser cavity resonators; AlGaAs; losses; oxidation behaviour; rapid lateral oxidation; slow transverse oxidation; tapered apertures; tapered dielectric apertures; vertical-cavity lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970222
  • Filename
    583487
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1543485