Title :
GaN/AlGaN MODFET with 80 GHz fmax and >100 V gate-drain breakdown voltage
Author :
Nguyen, N.X. ; Keller, B.P. ; Keller, S. ; Wu, Y.F. ; Le, M. ; Nguyen, C. ; DenBaars, S.P. ; Mishra, U.K. ; Grider, D.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
2/13/1997 12:00:00 AM
Abstract :
The authors report on the characteristics of 0.25 μm gate-length GaN/AlGaN modulation doped field effect transistors grown by MOCVD on sapphire. A record combination of high breakdown voltage (>100 V) and high frequency performance (fT=27 GHz, fmax=80 GHz) was achieved, which demonstrates the excellent potential of these devices for microwave power applications
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; sapphire; vapour phase epitaxial growth; 0.25 micron; 100 V; 27 GHz; 80 GHz; Al2O3; GaN-AlGaN; MOCVD growth; MODFET; field effect transistors; gate-drain breakdown voltage; high frequency performance; microwave power applications; modulation doped FET; sapphire substrate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970174
