Title :
Monte Carlo simulation of impact ionisation in photodetectors
Author :
Dunn, G.M. ; Rees, G.J. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ. of Technol., UK
fDate :
2/13/1997 12:00:00 AM
Abstract :
The authors have studied impact ionisation in optical detectors using a self-consistent Monte Carlo method. Current multiplication was found to be sensitive to both the applied potential and the incident light intensity. The amount of current multiplication was significantly higher than might be expected from a naive interpretation of the nominally applied field and this was attributed to screening effects within the device. The potential within the device was also significantly affected by the impact ionisation process and this in turn gave rise to an interesting structure (oscillations) in the current at higher incident light intensities and potentials
Keywords :
Monte Carlo methods; electric breakdown; impact ionisation; photodetectors; semiconductor device models; Monte Carlo simulation; applied potential; current multiplication; impact ionisation; incident light intensity; optical detectors; photodetectors; screening effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970191