DocumentCode :
1543617
Title :
Monte Carlo simulation of impact ionisation in photodetectors
Author :
Dunn, G.M. ; Rees, G.J. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Loughborough Univ. of Technol., UK
Volume :
33
Issue :
4
fYear :
1997
fDate :
2/13/1997 12:00:00 AM
Firstpage :
337
Lastpage :
339
Abstract :
The authors have studied impact ionisation in optical detectors using a self-consistent Monte Carlo method. Current multiplication was found to be sensitive to both the applied potential and the incident light intensity. The amount of current multiplication was significantly higher than might be expected from a naive interpretation of the nominally applied field and this was attributed to screening effects within the device. The potential within the device was also significantly affected by the impact ionisation process and this in turn gave rise to an interesting structure (oscillations) in the current at higher incident light intensities and potentials
Keywords :
Monte Carlo methods; electric breakdown; impact ionisation; photodetectors; semiconductor device models; Monte Carlo simulation; applied potential; current multiplication; impact ionisation; incident light intensity; optical detectors; photodetectors; screening effects;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19970191
Filename :
583512
Link To Document :
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