• DocumentCode
    1543617
  • Title

    Monte Carlo simulation of impact ionisation in photodetectors

  • Author

    Dunn, G.M. ; Rees, G.J. ; David, J.P.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Loughborough Univ. of Technol., UK
  • Volume
    33
  • Issue
    4
  • fYear
    1997
  • fDate
    2/13/1997 12:00:00 AM
  • Firstpage
    337
  • Lastpage
    339
  • Abstract
    The authors have studied impact ionisation in optical detectors using a self-consistent Monte Carlo method. Current multiplication was found to be sensitive to both the applied potential and the incident light intensity. The amount of current multiplication was significantly higher than might be expected from a naive interpretation of the nominally applied field and this was attributed to screening effects within the device. The potential within the device was also significantly affected by the impact ionisation process and this in turn gave rise to an interesting structure (oscillations) in the current at higher incident light intensities and potentials
  • Keywords
    Monte Carlo methods; electric breakdown; impact ionisation; photodetectors; semiconductor device models; Monte Carlo simulation; applied potential; current multiplication; impact ionisation; incident light intensity; optical detectors; photodetectors; screening effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19970191
  • Filename
    583512