Title :
Small InGaP/GaAs heterojunction bipolar transistors with high-speed operation
Author :
Oka, T. ; Ouchi, K. ; Nakamura, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
fDate :
2/13/1997 12:00:00 AM
Abstract :
High-speed InGaP/GaAs heterojunction bipolar transistors (HBTs) with a small emitter area of 0.35×3.8 μm are described. A cutoff frequency fT of as high as 86 GHz and a maximum oscillation frequency fmax of as high as 120 GHz are achieved at a collector current of as low as 1 mA. The peak fT and the peak fmax are 121 and 149 GHz, respectively. These excellent characteristics are due to a heavily-doped thin base layer and reduced parasitic capacitance of the base-collector junction
Keywords :
III-V semiconductors; capacitance; gallium arsenide; heavily doped semiconductors; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; 0.35 micron; 3.8 micron; 86 to 149 GHz; EHF; HBTs; InGaP-GaAs; SHF; base-collector junction; cutoff frequency; heavily-doped thin base layer; heterojunction bipolar transistors; high-speed operation; maximum oscillation frequency; parasitic capacitance reduction; small emitter area;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970184
