Fabrication of multiple-wavelength lasers in InGaAs-InGaAsP structures using direct laser writing

Author

Ong, T.K. ; Chan, Y.C. ; Ooi, B.S.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

13

Issue

11

fYear

2001

Firstpage

1161

Lastpage

1163

Abstract

We report the use of a direct laser writing technique to induce different degrees of intermixing in selected areas across a wafer. Four lasers with distinguishable lasing wavelengths ranging from 1480 to 1512 nm have been obtained from specific regions of a single chip intermixed using a Q-switched Nd:YAG laser with a wavelength of 1.064 μm, generating pulses of /spl sim/8 ns, and a pulse repetition rate of 10 Hz. This process offers a simple and potentially low-cost approach for integrating multiple-wavelength lasers for wavelength-division-multiplexing applications.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser materials processing; laser transitions; optical fabrication; quantum well lasers; semiconductor technology; waveguide lasers; wavelength division multiplexing; 1.064 mum; 1480 to 1512 nm; 8 ns; InGaAs-InGaAsP; InGaAs-InGaAsP MQW structures; Q-switched Nd:YAG laser; WDM applications; YAG:Nd; YAl5O12:Nd; direct laser writing; distinguishable lasing wavelengths; intermixing; laser pulse generation; multiple-wavelength laser fabrication; multiple-wavelength lasers; pulse repetition rate; single chip; wavelength-division-multiplexing applications; Laser applications; Optical device fabrication; Optical materials; Optical pulse generation; Optical pulses; Photonic band gap; Pulsed laser deposition; Quantum well lasers; Wavelength division multiplexing; Writing;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.959350

Filename

959350