Simple analytical expressions for the fringing field and fringing-field-induced transfer time in charge-coupled devices

Author

Bakker, Jacques G C

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

Volume

38

Issue

5

fYear

1991

fDate

5/1/1991 12:00:00 AM

Firstpage

1152

Lastpage

1161

Abstract

The author presents simple analytical solutions for the potential and the fringing field, especially for charge-coupled devices (CCDs). A description of the influence of the insulation layer in terms of an equivalent substrate thickness is used to find expressions for the optimal charge transport depth and charge transfer time for small charge packets in CCDs. The thickness of the insulation layer is accounted for by a scaling rule that is a nonlinear function of the thickness and dielectric constant of the insulation layer and the lateral dimensions of the device. Compared with computer simulations this technique gives good results for surface potentials that are found in CCDs. The results are used to calculate the optimal transfer depth and minimal transfer time in bulk and surface CCDs

Keywords

boundary-value problems; charge-coupled devices; electric fields; insulating thin films; CCD; charge transfer time; charge-coupled devices; dielectric constant; equivalent substrate thickness; fringing field; insulation layer; optimal charge transport depth; scaling rule; surface potentials; Charge carriers; Charge transfer; Dielectric constant; Dielectrics and electrical insulation; Electrodes; MOS devices; Semiconductor devices; Solid state circuits; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.78393

Filename

78393