Gallium arsenide finds a new niche

Author

Cates, Ron

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA, USA

Volume

27

Issue

4

fYear

1990

fDate

4/1/1990 12:00:00 AM

Firstpage

25

Lastpage

28

Abstract

The use of a very-large-scale integrated GaAs circuits for applications where high speed at room temperatures is needed, such as in computers or telecommunications, is examined. The advantages and disadvantages of a logic family called direct-coupled FET logic (DCFL) which couples the speed of GaAs with a significantly lower power dissipation than any other alternative are discussed. Material, fabrication, and packaging concerns associated with DCFL are considered. Some GaAs devices being produced in volume, at rates of several hundred a month, are described. The potential impact of these devices on the computer and telecommunications markets is addressed.<>

Keywords

III-V semiconductors; VLSI; field effect integrated circuits; gallium arsenide; integrated logic circuits; DCFL; GaAs; VLSI; computers; direct-coupled FET logic; high speed; integrated circuits; packaging; room temperatures; telecommunications; Application software; Coupling circuits; FETs; Fabrication; Gallium arsenide; Logic devices; Packaging; Power dissipation; Telecommunication computing; Temperature;

fLanguage

English

Journal_Title

Spectrum, IEEE

Publisher

ieee

ISSN

0018-9235

Type

jour

DOI

10.1109/6.58362

Filename

58362