Title :
Behavior of a charged two-level fluctuator in an Al-AlO/sub x/-Al single-electron transistor in the normal and superconducting state
Author :
Kenyon, M. ; Cobb, J.L. ; Amar, A. ; Song, D. ; Zimmerman, N.M. ; Lobb, C.J. ; Wellstood, F.C.
Author_Institution :
Dept. of Phys., Maryland Univ., College Park, MD, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
We have studied the behavior of a charged two-level fluctuator in an Al-AlO/sub x/-Al single-electron transistor (SET) in the normal state over a temperature range from 85 mK to 3 K. The fluctuator caused the SET´s island charge to shift by /spl Delta/Q/sub o/=0.1/spl plusmn/0.025 e with an escape rate out of each state which was periodic in the gate voltage. We compare our results to a model which assumes the fluctuator resides in one of the tunnel junctions and discuss model predictions for when the device is in the superconducting state.
Keywords :
aluminium; aluminium compounds; fluctuations in superconductors; single electron transistors; superconducting transistors; 85 mK to 3 K; Al-AlO-Al; Al-AlO/sub x/-Al single electron transistor; SET island charge; charged two-level fluctuator; normal state; superconducting state; tunnel junction; Capacitance; Particle scattering; Predictive models; Q measurement; Single electron transistors; Statistics; Switches; Temperature dependence; Tunneling; Voltage;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
