Inelastic resonance tunneling in S-Sm-S tunnel structures with s- and d-wave pairing in the electrodes

Author

Devyatov, I.A. ; Goncharov, D.V. ; Kupriyanov, M.Yu. ; Golubov, A.A.

Author_Institution

Inst. of Nucl. Phys., Moscow State Univ., Russia

Volume

9

Issue

2

fYear

1999

fDate

6/1/1999 12:00:00 AM

Firstpage

4300

Lastpage

4303

Abstract

Inelastic resonant tunneling via localized states (LS) in an amorphous interlayer located between superconducting banks with s- and d-wave symmetry of the order parameters is studied theoretically. The developed theoretical model is applied to the description of high T/sub c/ Josephson junctions with semiconductor oxide interlayers. It is shown that the calculated form of the current-voltage characteristics and the temperature dependence of the zero bias conductivity fit the experimental data only if anisotropic pairing occurs in the S-banks.

Keywords

Josephson effect; high-temperature superconductors; superconductive tunnelling; superconductor-semiconductor boundaries; Josephson junction; amorphous interlayer; anisotropic pairing; current-voltage characteristics; d-wave symmetry; high T/sub c/ superconductor; inelastic resonance tunneling; localized states; order parameter; s-wave symmetry; semiconductor oxide; superconductor-semiconductor-superconductor structure; temperature dependence; zero bias conductivity; Anisotropic magnetoresistance; Current-voltage characteristics; Distribution functions; Electrodes; Josephson junctions; Physics; Resonance; Temperature dependence; Tunneling; Voltage;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.783976

Filename

783976