DocumentCode
1543996
Title
Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers
Author
Wang, Cheng ; Grillot, Frédéric ; Even, Jacky
Author_Institution
Inst. Nat. des Sci. Appl., Univ. Eur. de Bretagne, Rennes, France
Volume
48
Issue
9
fYear
2012
Firstpage
1144
Lastpage
1150
Abstract
The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate equations, a new analytical modulation transfer function is developed via a small-signal analysis. The transfer function can clearly describe the impacts of the wetting layer and the excited states: finite carrier capture and carrier relaxation times as well as the Pauli blocking limits the modulation bandwidth. The definitions of the resonance frequency and the damping factor of QD lasers are also improved. From the analysis, it is demonstrated that carrier escape from the ground state to the excited states leads to a nonzero resonance frequency at low bias powers associated to a strong damping factor.
Keywords
excited states; quantum dot lasers; transfer function matrices; wetting; Pauli blocking limits; analytical modulation transfer function; excited states; four rate equations; quantum-dot lasers modulation response; small-signal analysis; wetting layer impacts; Bandwidth; Damping; Equations; Frequency modulation; Mathematical model; Resonant frequency; Modulation response; quantum-dot (QD); semiconductor laser;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2012.2205224
Filename
6220843
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