DocumentCode :
1543996
Title :
Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers
Author :
Wang, Cheng ; Grillot, Frédéric ; Even, Jacky
Author_Institution :
Inst. Nat. des Sci. Appl., Univ. Eur. de Bretagne, Rennes, France
Volume :
48
Issue :
9
fYear :
2012
Firstpage :
1144
Lastpage :
1150
Abstract :
The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate equations, a new analytical modulation transfer function is developed via a small-signal analysis. The transfer function can clearly describe the impacts of the wetting layer and the excited states: finite carrier capture and carrier relaxation times as well as the Pauli blocking limits the modulation bandwidth. The definitions of the resonance frequency and the damping factor of QD lasers are also improved. From the analysis, it is demonstrated that carrier escape from the ground state to the excited states leads to a nonzero resonance frequency at low bias powers associated to a strong damping factor.
Keywords :
excited states; quantum dot lasers; transfer function matrices; wetting; Pauli blocking limits; analytical modulation transfer function; excited states; four rate equations; quantum-dot lasers modulation response; small-signal analysis; wetting layer impacts; Bandwidth; Damping; Equations; Frequency modulation; Mathematical model; Resonant frequency; Modulation response; quantum-dot (QD); semiconductor laser;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2012.2205224
Filename :
6220843
Link To Document :
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