• DocumentCode
    1543996
  • Title

    Impacts of Wetting Layer and Excited State on the Modulation Response of Quantum-Dot Lasers

  • Author

    Wang, Cheng ; Grillot, Frédéric ; Even, Jacky

  • Author_Institution
    Inst. Nat. des Sci. Appl., Univ. Eur. de Bretagne, Rennes, France
  • Volume
    48
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1144
  • Lastpage
    1150
  • Abstract
    The modulation response of quantum-dot (QD) lasers is studied. Based on a set of four rate equations, a new analytical modulation transfer function is developed via a small-signal analysis. The transfer function can clearly describe the impacts of the wetting layer and the excited states: finite carrier capture and carrier relaxation times as well as the Pauli blocking limits the modulation bandwidth. The definitions of the resonance frequency and the damping factor of QD lasers are also improved. From the analysis, it is demonstrated that carrier escape from the ground state to the excited states leads to a nonzero resonance frequency at low bias powers associated to a strong damping factor.
  • Keywords
    excited states; quantum dot lasers; transfer function matrices; wetting; Pauli blocking limits; analytical modulation transfer function; excited states; four rate equations; quantum-dot lasers modulation response; small-signal analysis; wetting layer impacts; Bandwidth; Damping; Equations; Frequency modulation; Mathematical model; Resonant frequency; Modulation response; quantum-dot (QD); semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2012.2205224
  • Filename
    6220843