DocumentCode :
1544000
Title :
Fabrication of submicron BSCCO stacked junctions by focused ion beam (FIB)
Author :
Latyshev, Yu.I. ; Kim, S.-J. ; Yamashita, T.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Volume :
9
Issue :
2
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
4312
Lastpage :
4315
Abstract :
A method for the fabrication of in-plane submicron size intrinsic Josephson junctions by focused ion beam (FIB) has been developed. The method includes double-sided processing of thin layered single crystals by FIB and has been demonstrated on high quality BSCCO (2212) single crystal whiskers. The stacked junctions with in-plane area down to 0.3 /spl mu/m/sup 2/ have been fabricated without deterioration of superconducting transition temperature T/sub c/ and the superconducting energy gap /spl Delta/.
Keywords :
Josephson effect; bismuth compounds; calcium compounds; focused ion beam technology; high-temperature superconductors; strontium compounds; superconducting energy gap; superconducting transition temperature; whiskers (crystal); BSCCO single crystal whisker; Bi/sub 2/Sr/sub 2/CaCu/sub 2/O; focused ion beam fabrication; intrinsic Josephson effect; layered high T/sub c/ superconductor; stacked junction; superconducting energy gap; superconducting transition temperature; Bismuth compounds; Fabrication; Ion beams; Josephson junctions; Plasma properties; Plasma temperature; Superconducting epitaxial layers; Superconducting materials; Superconducting microwave devices; Superconducting transition temperature;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.783979
Filename :
783979
Link To Document :
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