Title :
A dynamic model of an a-Si:H photoconductive sensor
Author :
Takayama, Satoshi ; Mori, Ken-Ichi ; Suzuki, Kouhei ; Tanuma, Chiaki
Author_Institution :
Toshiba R&D Center, Kanagawa, Japan
fDate :
5/1/1991 12:00:00 AM
Abstract :
A dynamic model of an a-Si:H photoconductive sensor under a pulse driven condition is proposed. In this model, it is assumed that a high rate of recombination at the interface between a-Si:H and the substrate occurs due to hole drift along the interface when a driving voltage is applied between the electrodes. Calculated results agree with experimental results to an accuracy of 10%. It is shown that the localized state density of the bulk a-Si:H is one of the dominant factors determining the photoresponse of the a-Si:H photoconductive sensor under a pulse driven condition, and that the minimum photoresponse time of this sensor is about 5 ms
Keywords :
amorphous semiconductors; electron-hole recombination; electronic density of states; elemental semiconductors; hydrogen; image sensors; photoconducting devices; photodetectors; semiconductor device models; silicon; 5 ms; amorphous Si:H; carrier generation model; dynamic model; hole drift; localized state density; minimum photoresponse time; photoconductive sensor; pulse driven condition; recombination; semiconductors; Chemical sensors; Electrodes; Image sensors; Photoconducting materials; Photoconductivity; Sensor arrays; Sensor phenomena and characterization; Space vector pulse width modulation; Thin film sensors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
