Title :
Surface-emitting GaAs light-emitting diode/laser diode with modified coaxial transverse junction (CTJ) structure
Author :
Yamada, H. ; Watanabe, H. ; Ito, H. ; Inaba, H.
Author_Institution :
Tohoku Univ., Sendai, Japan
fDate :
1/21/1988 12:00:00 AM
Abstract :
A novel surface-emitting light-emitting diode (LED)/laser diode (LD) with a coaxial transverse junction (CTJ) structure is demonstrated by modified structures of the well and hole types with improved thermal properties. A narrow emission pattern for the LED was realised due to the CTJ structure and preliminary results for laser operation were also obtained at low temperatures
Keywords :
III-V semiconductors; gallium arsenide; light emitting diodes; semiconductor junction lasers; AlGaAs-GaAs; III-V semiconductors; hole type; laser diode; light-emitting diode; low temperatures; modified coaxial transverse junction; narrow emission pattern; semiconductor lasers; surface emitting LED; well type;
Journal_Title :
Electronics Letters
