DocumentCode :
1544384
Title :
Properties of Josephson array oscillators at the submillimeter wave region
Author :
Kawakami, A. ; Uzawa, Y. ; Wang, Z.
Author_Institution :
Kansai Adv. Res. Center, Commun. Res. Lab., Kobe, Japan
Volume :
9
Issue :
2
fYear :
1999
fDate :
6/1/1999 12:00:00 AM
Firstpage :
4554
Lastpage :
4557
Abstract :
We have developed resistively shunted tunnel junctions with a small parasitic inductance (/spl equiv/100 fH) to improve the high-frequency performance of Josephson array oscillators. Josephson array oscillators with 11 such junctions and Nb microstrip resonators were designed and fabricated to operate at 690 GHz. Shapiro steps induced by Josephson oscillation were clearly observed at the submillimeter frequency region. By comparing the step height with the numerical simulation, we estimated the power of the Josephson oscillator delivered to the load resistor to be about 10 /spl mu/W at 625 GHz. The linewidth of the Josephson array oscillator was also measured using an integrated receiver consisting of two Josephson array oscillators and an SIS mixer. The designed frequency of the receiver was set at 550 GHz. IF output power spectrum was observed when both the oscillators were biased at about 1.17 mV which corresponds to 566 GHz. The composite linewidth of Josephson oscillation was measured about 8 MHz at 4.2 K.
Keywords :
microstrip resonators; submillimetre wave devices; superconducting junction devices; superconducting microwave devices; 1.17 mV; 10 muW; 550 GHz; 625 GHz; Josephson array oscillator; Josephson array oscillators; Nb microstrip resonators; composite linewidth; high-frequency performance; integrated receiver; linewidth; load resistor; resistively shunted tunnel junctions; small parasitic inductance; submillimeter wave region; Frequency; Inductance; Microstrip antenna arrays; Microstrip resonators; Niobium; Oscillators; Parasitic capacitance; Power generation; Power measurement; Resistors;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.784039
Filename :
784039
Link To Document :
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