DocumentCode
1544393
Title
Total-dose effects in double-gate-controlled NPN bipolar transistors
Author
Vandooren, A. ; Yuan, J. ; Flandre, D. ; Colinge, J.P.
Author_Institution
Digital DNA Labs., Motorola Inc., Austin, TX, USA
Volume
48
Issue
5
fYear
2001
fDate
10/1/2001 12:00:00 AM
Firstpage
1694
Lastpage
1699
Abstract
The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results
Keywords
bipolar transistors; dosimetry; gamma-ray effects; radiation hardening (electronics); accumulation mode; degradation; double-gate-controlled NPN bipolar transistors; gamma irradiation; positive charge; radiation hardness; surface recombination velocity; total dose; Analytical models; Bipolar transistors; Degradation; Etching; Laboratories; MOSFETs; Microelectronics; Radiation effects; Semiconductor films; Silicon;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.960359
Filename
960359
Link To Document