Title :
Total-dose effects in double-gate-controlled NPN bipolar transistors
Author :
Vandooren, A. ; Yuan, J. ; Flandre, D. ; Colinge, J.P.
Author_Institution :
Digital DNA Labs., Motorola Inc., Austin, TX, USA
fDate :
10/1/2001 12:00:00 AM
Abstract :
The sensitivity to radiation-induced degradation of new double-gate-controlled lateral NPN bipolar transistors has been investigated. The radiation hardness is improved when the device is working in the accumulation mode. The effect of positive charge and increased surface recombination velocity is analyzed by means of device simulations and experimental results
Keywords :
bipolar transistors; dosimetry; gamma-ray effects; radiation hardening (electronics); accumulation mode; degradation; double-gate-controlled NPN bipolar transistors; gamma irradiation; positive charge; radiation hardness; surface recombination velocity; total dose; Analytical models; Bipolar transistors; Degradation; Etching; Laboratories; MOSFETs; Microelectronics; Radiation effects; Semiconductor films; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
