• DocumentCode
    1544407
  • Title

    Proton displacement damage in light-emitting and laser diodes

  • Author

    Johnston, Allan H.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    48
  • Issue
    5
  • fYear
    2001
  • fDate
    10/1/2001 12:00:00 AM
  • Firstpage
    1713
  • Lastpage
    1720
  • Abstract
    The effects of proton displacement damage on light-emitting diodes (LEDs) and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exist in the literature. Injection-enhanced annealing is discussed, along with the issue of energy dependence of proton displacement damage. New characterization methods are proposed for light-emitting diodes that complement measurement of light output and provide a better indication of nonradiative recombination centers
  • Keywords
    annealing; light emitting diodes; proton effects; semiconductor lasers; LED; injection-enhanced annealing; laser diodes; light-emitting diodes; nonradiative recombination centers; proton displacement damage; radiation sensitivity; Annealing; Charge carrier lifetime; Degradation; Diode lasers; Light emitting diodes; Propulsion; Protons; Silicon; Space technology; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.960362
  • Filename
    960362