DocumentCode :
1544407
Title :
Proton displacement damage in light-emitting and laser diodes
Author :
Johnston, Allan H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
48
Issue :
5
fYear :
2001
fDate :
10/1/2001 12:00:00 AM
Firstpage :
1713
Lastpage :
1720
Abstract :
The effects of proton displacement damage on light-emitting diodes (LEDs) and laser diodes are discussed, comparing the radiation sensitivity of current technology devices with older devices for which data exist in the literature. Injection-enhanced annealing is discussed, along with the issue of energy dependence of proton displacement damage. New characterization methods are proposed for light-emitting diodes that complement measurement of light output and provide a better indication of nonradiative recombination centers
Keywords :
annealing; light emitting diodes; proton effects; semiconductor lasers; LED; injection-enhanced annealing; laser diodes; light-emitting diodes; nonradiative recombination centers; proton displacement damage; radiation sensitivity; Annealing; Charge carrier lifetime; Degradation; Diode lasers; Light emitting diodes; Propulsion; Protons; Silicon; Space technology; Wavelength measurement;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.960362
Filename :
960362
Link To Document :
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