Title :
Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices
Author :
Fjeldly, Tor A. ; Deng, Yanqing ; Shur, Michael S. ; Hjalmarson, Harold P. ; Muyshondt, Arnoldo ; Ytterdal, Trond
Author_Institution :
UniK, Norwegian Univ. of Sci. & Technol., Kjeller, Norway
fDate :
10/1/2001 12:00:00 AM
Abstract :
We have developed a dynamic model for photoelectric effect in bipolar devices exposed to a wide range of ionizing radiation intensities. We represent the stationary and dynamic photocurrents by current sources in parallel with each p-n junction. These sources include the prompt photocurrent of the depletion regions and the delayed response associated with the buildup and discharge of excess charge carriers in the quasi-neutral (q-n) regions adjacent to the junctions. The latter are described in terms of dynamic delay times for each q-n region, which can be represented by RC equivalent delay circuits. The model has been implemented in the circuit simulator AIM-Spice and has been verified by numerical simulations
Keywords :
bipolar transistors; numerical analysis; p-n junctions; photoconductivity; radiation effects; semiconductor device models; AIM-Spice; RC equivalent delay circuits; bipolar devices; bipolar junction transistors; circuit simulator; delayed response; dynamic delay times; dynamic model; dynamic photocurrents; high-dose-rate transient ionizing radiation effects modeling; numerical simulations; p-n junction; photoelectric effect; quasineutral regions; stationary photocurrents; Charge carrier processes; Circuit simulation; Delay; Doping; Ionizing radiation; Laboratories; P-n junctions; Photoconductivity; Photovoltaic effects; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
