• DocumentCode
    1544453
  • Title

    Herb´s bipolar transistors

  • Author

    Brar, Berinder ; Sullivan, Gerard J. ; Asbeck, Peter M.

  • Author_Institution
    Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
  • Volume
    48
  • Issue
    11
  • fYear
    2001
  • fDate
    11/1/2001 12:00:00 AM
  • Firstpage
    2473
  • Lastpage
    2476
  • Abstract
    The profound influence of Herbert Kroemer´s ideas on the development of high-performance bipolar transistors is described. The historical context and subsequent development of innovations such as the drift base, achieved through concentration gradients and later with semiconductor bandgap grading, the use of wide bandgap emitters, concepts of collector-up transistors, and the introduction of new heterojunction materials, are reviewed
  • Keywords
    bipolar transistors; carrier density; history; semiconductor heterojunctions; wide band gap semiconductors; Herbert Kroemer; bipolar transistors; collector-up transistors; concentration gradients; drift base; heterojunction materials; history; semiconductor bandgap grading; wide bandgap emitters; Bipolar transistors; Heterojunction bipolar transistors; Laser theory; Optical materials; Photonic band gap; Physics; Semiconductor lasers; Semiconductor materials; Solid state circuits; Technological innovation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.960370
  • Filename
    960370