Title :
Herb´s bipolar transistors
Author :
Brar, Berinder ; Sullivan, Gerard J. ; Asbeck, Peter M.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fDate :
11/1/2001 12:00:00 AM
Abstract :
The profound influence of Herbert Kroemer´s ideas on the development of high-performance bipolar transistors is described. The historical context and subsequent development of innovations such as the drift base, achieved through concentration gradients and later with semiconductor bandgap grading, the use of wide bandgap emitters, concepts of collector-up transistors, and the introduction of new heterojunction materials, are reviewed
Keywords :
bipolar transistors; carrier density; history; semiconductor heterojunctions; wide band gap semiconductors; Herbert Kroemer; bipolar transistors; collector-up transistors; concentration gradients; drift base; heterojunction materials; history; semiconductor bandgap grading; wide bandgap emitters; Bipolar transistors; Heterojunction bipolar transistors; Laser theory; Optical materials; Photonic band gap; Physics; Semiconductor lasers; Semiconductor materials; Solid state circuits; Technological innovation;
Journal_Title :
Electron Devices, IEEE Transactions on
