DocumentCode
1544453
Title
Herb´s bipolar transistors
Author
Brar, Berinder ; Sullivan, Gerard J. ; Asbeck, Peter M.
Author_Institution
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Volume
48
Issue
11
fYear
2001
fDate
11/1/2001 12:00:00 AM
Firstpage
2473
Lastpage
2476
Abstract
The profound influence of Herbert Kroemer´s ideas on the development of high-performance bipolar transistors is described. The historical context and subsequent development of innovations such as the drift base, achieved through concentration gradients and later with semiconductor bandgap grading, the use of wide bandgap emitters, concepts of collector-up transistors, and the introduction of new heterojunction materials, are reviewed
Keywords
bipolar transistors; carrier density; history; semiconductor heterojunctions; wide band gap semiconductors; Herbert Kroemer; bipolar transistors; collector-up transistors; concentration gradients; drift base; heterojunction materials; history; semiconductor bandgap grading; wide bandgap emitters; Bipolar transistors; Heterojunction bipolar transistors; Laser theory; Optical materials; Photonic band gap; Physics; Semiconductor lasers; Semiconductor materials; Solid state circuits; Technological innovation;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.960370
Filename
960370
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