DocumentCode :
1544482
Title :
Impact of ex-situ and in-situ cleans on the performance of bipolar transistors with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts
Author :
Rahim, Ahmad Ismat Abdul ; Marsh, Chris D. ; Ashburn, Peter ; Booker, G.R.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
Volume :
48
Issue :
11
fYear :
2001
fDate :
11/1/2001 12:00:00 AM
Firstpage :
2506
Lastpage :
2513
Abstract :
This paper investigates the effects of an in-situ hydrogen bake and an ex-situ hydrofluoric acid (HF) etch prior to polysilicon deposition on the electrical characteristics of bipolar transistors fabricated with low thermal budget in-situ phosphorus-doped polysilicon emitter contacts. Emitter contact deposition in a UHV-compatible low pressure chemical vapor deposition (LPCVD) cluster tool is also compared with deposition in a LPCVD furnace. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) are used to characterize the emitter contact material and the interface structure and a comparison is made with Gummel plots and emitter resistances on bipolar transistors. The SIMS results show that an in-situ hydrogen bake in a cluster tool gives an extremely low oxygen dose at the interface of 6.3×1013 cm-2, compared with 7.7× 10 14 and 2.9×1015 cm-2 for an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. TEM shows that the in-situ hydrogen bake results in single-crystal silicon with a high density of defects, including dislocations and twins. The ex-situ HF etch gives polycrystalline silicon for deposition in both a cluster tool and a LPCVD furnace. The single-crystal silicon emitter contact has an extremely low emitter resistance of 21 Ω.μm2 in spite of the high defect density and the light emitter anneal of 30 s at 900°C. This compares with emitter resistances of 151 and 260 Ω.μ m2 for the polycrystalline silicon contacts produced using an ex-situ HF etch and deposition in a cluster tool or a LPCVD furnace, respectively. These values of emitter resistance correlate well with the interface oxygen doses and the structure of the interfacial oxide layer. The high defect density in the single-crystal silicon is considered to be due to the high concentration of phosphorus (>5×1019 cm-3 ) in the as-deposited layers
Keywords :
CVD coatings; annealing; bipolar transistors; cluster tools; elemental semiconductors; etching; phosphorus; secondary ion mass spectra; semiconductor doping; silicon; surface cleaning; transmission electron microscopy; 900 C; Gummel plot; LPCVD cluster tool; LPCVD furnace; Si:P; annealing; bipolar transistor; cleaning process; defect density; electrical characteristics; emitter resistance; ex-situ hydrofluoric acid etching; in-situ hydrogen bake; in-situ phosphorus-doped polysilicon emitter contact; interface structure; secondary ion mass spectroscopy; thermal budget; transmission electron microscopy; Bipolar transistors; Chemical vapor deposition; Contacts; Electric variables; Electron emission; Etching; Furnaces; Hafnium; Hydrogen; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.960375
Filename :
960375
Link To Document :
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