High-performance implanted base silicon bipolar technology for RF applications

Author

Böck, Josef ; Knapp, Herbert ; Aufinger, Klaus ; Meister, Thomas F. ; Wurzer, Martin ; Boguth, Sabine ; Treitinger, Ludwig

Author_Institution

Infineon Technol., Munich, Germany

Volume

48

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

2514

Lastpage

2519

Abstract

A 0.4 μm silicon bipolar technology for mixed digital/analog RF-applications is described. Without increasing the process complexity in comparison to current production technologies transit frequencies of 52 GHz, maximum oscillation frequencies of 65 GHz and minimum noise figures of 0.7 and 1.3 dB at 3 and 6 GHz are achieved. Emitter-coupled logic (ECL) ring oscillators have a minimum gate delay of 12 ps, the low power capability of the technology is proven by a current-mode logic (CML) power delay product of 5.2 fJ and a dynamic frequency divider operates up to 52 GHz. These results demonstrate the suitability of this technology for mobile communications up to at least 6 GHz and for high-speed optical data links at 10 Gbit/s and above

Keywords

bipolar integrated circuits; bipolar transistors; elemental semiconductors; ion implantation; mixed analogue-digital integrated circuits; silicon; 0.4 micron; 0.7 dB; 1.3 dB; 10 Gbit/s; 3 to 65 GHz; CML power-delay product; ECL ring oscillator; Si; dynamic frequency divider; gate delay; high-speed optical data link; implanted base silicon bipolar transistor; low-power technology; minimum noise figure; mixed digital/analog RF integrated circuit; mobile communication; oscillation frequency; transit frequency; Communications technology; Delay; Frequency conversion; Logic; Noise figure; Optical frequency conversion; Production; Radio frequency; Ring oscillators; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.960376

Filename

960376