A complementary bipolar technology family with a Vertically Integrated PNP for high-frequency analog applications

Author

Bashir, Rashid ; Hébert, François ; DeSantis, Joseph ; McGregor, Joel M. ; Yindeepol, Wipawan ; Brown, Kevin ; Moraveji, Farhood ; Mills, Thomas B. ; Sadovnikov, Alexei ; McGinty, James ; Hopper, Peter ; Sabsowitz, Robert ; Khidr, Mohamed ; Krakowski, Tra

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

Volume

48

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

2525

Lastpage

2534

Abstract

Silicon complementary bipolar processes offer the possibility of realizing high-performance circuits for a variety of analog applications. This paper presents a summary of silicon complementary bipolar process technology reported in recent years. Specifically, an overview of a family of silicon complementary bipolar process technologies, called Vertically Integrated PNP (VIP^TMI) which have been used for the realization of high-frequency analog circuits is presented. Three process technologies, termed VIP-3, VIP-3H, and VIP-4H offer device breakdowns of 40, 85, and 170 V, respectively. These processes feature optimized vertically integrated bipolar junction transistors (PNPs) along with high performance NPN transistors with polycrystalline silicon emitters, low parasitic polycrystalline silicon resistors, and metal-insulator-polycrystalline silicon capacitors. Key issues and aspects of the processes are described. These issues include the polycrystalline silicon emitter optimization and vertical and lateral device isolation in the transistors. Circuit design examples are also described which have been implemented in these technologies

Keywords

bipolar analogue integrated circuits; bipolar transistors; elemental semiconductors; silicon; 170 V; 40 V; 85 V; NPN transistor; Si; VIP-3; VIP-3H; VIP-4H; Vertically Integrated PNP; breakdown voltage; complementary bipolar technology; device isolation; high-frequency analog circuit; metal-insulator-polycrystalline silicon capacitor; polycrystalline silicon emitter; polycrystalline silicon resistor; silicon bipolar junction transistor; Analog circuits; CMOS technology; Capacitors; Circuit synthesis; Electric breakdown; Integrated circuit technology; Milling machines; Resistors; Silicon; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.960378

Filename

960378