DocumentCode
1544539
Title
Nonequilibrium electron transport in HBTs
Author
Ishibashi, Tadao
Author_Institution
NTT Photonics Labs., Kanagawa, Japan
Volume
48
Issue
11
fYear
2001
fDate
11/1/2001 12:00:00 AM
Firstpage
2595
Lastpage
2605
Abstract
Nonequilibrium electron transport in heterojunction bipolar transistors (HBTs) becomes clearly observable as their vertical dimensions are reduced, This is the reason for the superior tradeoff relationships between the device parameters and the resultant high-speed performance of HBTs fabricated with III-V semiconductor materials. This paper reviews the hot carrier effect in the base and the velocity overshoot effect in the collector and discusses the roles these effects play in reducing carrier traveling times and improving device performance
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; GaAs; HBTs; III-V semiconductor materials; InP; carrier traveling times; device parameter; device performance; high-speed performance; hot carrier effect; nonequilibrium electron transport; tradeoff relationships; velocity overshoot effect; vertical dimensions; Cutoff frequency; Electrons; FETs; HEMTs; Heterojunction bipolar transistors; Indium phosphide; MODFETs; Semiconductor materials; Steady-state; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.960386
Filename
960386
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