InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs

Author

Bolognesi, C.R. ; Yeo, Philip ; Xu, X.G. ; Watkins, S.P.

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC

Volume

48

Issue

11

fYear

2001

fDate

11/1/2001 12:00:00 AM

Firstpage

2631

Lastpage

2639

Abstract

We report on the physical operation and performance of MOCVD-grown abrupt heterojunction InP/GaAs_0.51Sb_0.49/InP double heterojunction bipolar transistors (DHBTs). In particular, the effect of the InP collector thickness on the breakdown voltage and on the current gain cutoff frequency is assessed and a f_T of 106 GHz is reported for a DHBT with a 400 Å base and a 2000 Å InP collector with a BV_CEO of 8 V. We show that InP/GaAsSb/InP DHBTs are characterized by a weak variation of f_T as a function of temperature. Finally, we also demonstrate that high maximum oscillation frequencies f_MAX>f_T can be achieved in scaled high-speed InP/GaAsSb/InP DHBTs, and provide estimates of the maximum cutoff frequencies achievable for this emergent but promising material system. Recent results on improved structures validate our performance predictions with cutoff frequencies well beyond 200 GHz

Keywords

III-V semiconductors; MOCVD coatings; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device breakdown; 106 GHz; 8 V; InP-GaAs_0.51Sb_0.49-InP; InP/GaAsSb/InP double heterojunction bipolar transistor; MOCVD growth; abrupt heterojunction; breakdown voltage; current gain cutoff frequency; high-speed operation; maximum oscillation frequency; millimeter-wave device; Bipolar transistors; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Electrons; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Laboratories;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.960389

Filename

960389