Title :
InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs
Author :
Bolognesi, C.R. ; Yeo, Philip ; Xu, X.G. ; Watkins, S.P.
Author_Institution :
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC
fDate :
11/1/2001 12:00:00 AM
Abstract :
We report on the physical operation and performance of MOCVD-grown abrupt heterojunction InP/GaAs0.51Sb0.49/InP double heterojunction bipolar transistors (DHBTs). In particular, the effect of the InP collector thickness on the breakdown voltage and on the current gain cutoff frequency is assessed and a fT of 106 GHz is reported for a DHBT with a 400 Å base and a 2000 Å InP collector with a BVCEO of 8 V. We show that InP/GaAsSb/InP DHBTs are characterized by a weak variation of fT as a function of temperature. Finally, we also demonstrate that high maximum oscillation frequencies fMAX>fT can be achieved in scaled high-speed InP/GaAsSb/InP DHBTs, and provide estimates of the maximum cutoff frequencies achievable for this emergent but promising material system. Recent results on improved structures validate our performance predictions with cutoff frequencies well beyond 200 GHz
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device breakdown; 106 GHz; 8 V; InP-GaAs0.51Sb0.49-InP; InP/GaAsSb/InP double heterojunction bipolar transistor; MOCVD growth; abrupt heterojunction; breakdown voltage; current gain cutoff frequency; high-speed operation; maximum oscillation frequency; millimeter-wave device; Bipolar transistors; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Electrons; Frequency estimation; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Laboratories;
Journal_Title :
Electron Devices, IEEE Transactions on
