Fabrication and characterization of a linear mode confinement modulator on GaAs

Author

Belanger, Michel ; Najafi, S. Iraj ; Maciejko, Romain ; Currie, John F.

Author_Institution

Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada

Volume

6

Issue

7

fYear

1988

fDate

8/1/1988 12:00:00 AM

Firstpage

1205

Lastpage

1208

Abstract

An electrooptic modulator based on GaAs is proposed. The configuration as well as the operating principle yield high packing density and insensitivity to the material variation. One configuration has been fabricated and characterized. Its linear modulation characteristic has been measured, and a modulation depth of more than 70% has been obtained with a device length of only 1.5 mm. Several improvements are proposed to reduce the driving voltage and the excess losses. For example, a modified electrode structure can improve the beam shaping in the connecting guide and thus increase the transmission when the device is in the `on´ state

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; optical communication equipment; optical modulation; GaAs; III-V semiconductors; beam shaping; electrooptic modulator; high packing density; linear mode confinement modulator; linear modulation characteristic; modified electrode structure; Electrooptic modulators; Fabrication; Gallium arsenide; Joining processes; Optical interferometry; Optical modulation; Optical refraction; Optical variables control; Optical waveguides; Substrates;

fLanguage

English

Journal_Title

Selected Areas in Communications, IEEE Journal on

Publisher

ieee

ISSN

0733-8716

Type

jour

DOI

10.1109/49.7841

Filename

7841