Modeling and analysis of capacitances in metallic single electron tunneling structures

The calculation of the capacitances between well-separated thin coplanar electrodes is of fundamental importance in single charge electronics, e.g. for optimizing the geometry of digital circuits with respect to desired coupling as well as to parasitic cross-talk capacitances. We are able to extract such capacitances from three-dimensional numerical field computations basing on the boundary element method. Our program yields relevant information about the dependence of the capacitance on geometry as verified by comparing calculated gate coupling capacitances of different types of single electron transistors with values obtained from the experiment.