Title :
Tunnel injection active region in an oxide-confined vertical-cavity surface-emitting laser
Author :
Huffaker, D.L. ; Oh, T.-H. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Data are presented on oxide-confined AlGaAs-GaAs-InGaAs VCSEL´s that use high-index half-wave GaAs spacer layers and electronic tunnel injection and confinement. To our knowledge, this is the first demonstration of tunnel injection in a vertical-cavity laser. Threshold currents range from 344 μA for a 6.5-μm diameter device to 151 μA for a 1-μm diameter device. The relatively high threshold currents are attributed to a detuned cavity and higher order transverse-mode operation.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; quantum well lasers; surface emitting lasers; tunnelling; 1 mum; 151 muA; 344 muA; 6.5 mum; AlGaAs-GaAs-InGaAs; AlGaAs-GaAs-InGaAs VCSEL; DBR; GaAs; VCSEL; confinement; detuned cavity; electronic tunnel injection; high-index half-wave GaAs spacer layers; higher order transverse-mode operation; oxide-confined vertical-cavity surface-emitting laser; threshold currents; tunnel injection active region; Carrier confinement; Distributed Bragg reflectors; Gallium arsenide; Optical pumping; Optical resonators; Pump lasers; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
