Full space-time simulation for high-brightness semiconductor lasers

Author

Moloney, J.V. ; Indik, R.A. ; Ning, C.Z.

Author_Institution

Center for Math. Sci., Arizona Univ., Tucson, AZ, USA

Volume

9

Issue

6

fYear

1997

fDate

6/1/1997 12:00:00 AM

Firstpage

731

Lastpage

733

Abstract

A semiconductor laser model is presented, which resolves the full time, longitudinal and lateral space dependences. The model is applied to an investigation of the dynamical stability of an integrated master-oscillator power-amplifier (MOPA) device. The model captures the full gain and refractive index bandwidth as a function of total carrier density. Our simulation confirms, for the first time, some recent experimental observations of high frequency whole beam oscillations and experimental reports that complex transverse filamentation occurs at high power amplifier currents.

Keywords

brightness; carrier density; distributed Bragg reflector lasers; laser stability; laser theory; quantum well lasers; refractive index; semiconductor device models; semiconductor lasers; DBR sections; InGaAs quantum well; InGaAs-GaAs; MOPA device; complex transverse filamentation; dynamical stability; full gain; full space-time simulation; high frequency whole beam oscillation; high power amplifier currents; high-brightness semiconductor lasers; integrated master-oscillator power-amplifier; lateral space dependence; longitudinal space dependence; refractive index bandwidth; semiconductor laser model; total carrier density; Charge carrier density; Frequency; Laser modes; Laser stability; Laser theory; Microscopy; Optical propagation; Pulse amplifiers; Refractive index; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.584972

Filename

584972