Title :
High-temperature 4.5-μm type-II quantum-well laser with Auger suppression
Author :
Felix, C.L. ; Meyer, J.R. ; Vurgaftman, I. ; Lin, C.-H. ; Murry, S.J. ; Zhang, D. ; Pei, S.-S.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fDate :
6/1/1997 12:00:00 AM
Abstract :
Laser emission at 4.2-4.5 μm has been observed at temperatures up to 310 K in pulsed optical pumping experiments on type-II quantum-well (QW) lasers with four constituents in each period (InAs-Ga/sub 1-x/In/sub x/Sb-InAs-AlSb). The characteristic temperature, T0, is 41 K, and a peak output power exceeding 2 W/facet is observed at 200 K. The power conversion efficiency per facet of /spl ap/0.2% up to 200 K is within a factor of 2 of the theoretical value. The 300 K Auger coefficient of 4×10/sup -27/ cm6/s extracted from the threshold pump intensity demonstrates that Auger losses have been suppressed by a factor of four.
Keywords :
Auger effect; III-V semiconductors; aluminium compounds; electron-hole recombination; gallium compounds; high-temperature effects; indium compounds; laser transitions; optical losses; optical pumping; photoluminescence; quantum well lasers; 0.2 percent; 2 W; 200 K; 300 K; 310 K; 4.2 to 4.5 mum; 41 K; Auger coefficient; Auger losses; Auger suppression; InAs-Ga/sub 1-x/In/sub x/Sb-InAs-AlSb; InAs-GaInSb-InAs-AlSb; characteristic temperature; four constituents; high-temperature 4.5-/spl mu/m type-II quantum-well laser; laser emission; peak output power; power conversion efficiency; pulsed optical pumping experiments; threshold pump intensity; Chemical lasers; Laser modes; Optical buffering; Optical pulses; Optical pumping; Photonic band gap; Pump lasers; Quantum well lasers; Semiconductor lasers; Temperature;
Journal_Title :
Photonics Technology Letters, IEEE
