Efficient coupling in integrated twin-waveguide lasers using waveguide tapers

Author

Studenkov, P.V. ; Gokhale, M.R. ; Forrest, S.R.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

Volume

11

Issue

9

fYear

1999

Firstpage

1096

Lastpage

1098

Abstract

We demonstrate a 1.55-μm wavelength, InGaAsP-InP, twin-waveguide (TG) laser integrated with passive ridge waveguides using low-loss taper couplers. The lateral taper on the laser waveguide induces efficient resonant coupling of light between the active and passive layers. The device is fabricated using low-cost conventional photolithography and reactive ion etching of a TG structure grown by gas-source molecular beam epitaxy. This structure is suitable for integrating a variety of photonic devices without requiring epitaxial regrowth.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser beams; optical couplers; optical fabrication; optical losses; photolithography; ridge waveguides; semiconductor lasers; sputter etching; waveguide lasers; 1.55 mum; InGaAsP-InP; active layers; coupling; epitaxial regrowth; fabrication; gas-source molecular beam epitaxy; integrated twin-waveguide lasers; laser waveguide; lateral taper; low-cost conventional photolithography; low-loss taper couplers; passive layers; passive ridge waveguides; photonic devices; reactive ion etching; resonant coupling; twin-waveguide laser; waveguide tapers; Couplers; Etching; Gas lasers; Optical coupling; Optical waveguides; Photonic integrated circuits; Resonance; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.784167

Filename

784167