• DocumentCode
    1545279
  • Title

    In-Plane Gate Transistors With a 40- \\mu\\hbox {m} -Wide Channel Width

  • Author

    Chung, Tung-Hsun ; Lin, Wei-Hsun ; Chao, Yi-Kai ; Chang, Shu-Wei ; Lin, Shih-Yen

  • Author_Institution
    Res. Center for Appl. Sci., Acad. Sinica, Taipei, Taiwan
  • Volume
    33
  • Issue
    8
  • fYear
    2012
  • Firstpage
    1129
  • Lastpage
    1131
  • Abstract
    An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 μm in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at - 10 V gate bias.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 2D electron-gas channel; GaAs-AlGaAs; HEMT; drain current; drain current modulation; gate bias voltages; high-electron mobility transistors; in-plane gate transistors; size 40 mum; surface-induced channel depletion; Gallium arsenide; HEMTs; Logic gates; MODFETs; Modulation; Standards; 2-D electron gas (2DEG); In-plane gate transistors (IPGTs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2199735
  • Filename
    6221946
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1545279