Device characteristics of 0.35 μm P-channel DINOR flash memory using band-to-band tunneling-induced hot electron (BBHE) programming

Author

Ohnakado, Takahiro ; Onoda, Hiroshi ; Sakamoto, Osamu ; Hayashi, Kiyoshi ; Nishioka, Naho ; Takada, Hiroshi ; Sugahara, Kazuyuki ; Ajika, Natsuo ; Satoh, Shin-ichi

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

Volume

46

Issue

9

fYear

1999

fDate

9/1/1999 12:00:00 AM

Firstpage

1866

Lastpage

1871

Abstract

The P-channel DINOR flash memory, which uses the band-to-band tunneling induced hot electron (BBHE) program method having the advantages of high scalability, high efficiency, and high oxide reliability, was fabricated by 0.35-μm-rule CMOS process and was investigated in detail. An ultra-high programming throughput of less than 8 ns/byte (=4 μs/512 byte) and a low current consumption of less than 250 μA were achieved by utilizing 512-byte parallel programming. Furthermore, we investigated its endurance characteristics up to 10⁶ program/erase cycles, and window narrowing and G_m degradation were found to be very small even after 10⁶ cycles. It is thought that the BBHE injection point contributes to the G _m stability and the oxide-damage-reduced operation contributes to the good window narrowing characteristics. The P-channel DINOR flash memory realizing high programming throughput with low power consumption is one of the strongest candidates for the next generation of high-performance, low-voltage flash memories

Keywords

CMOS memory circuits; NOR circuits; PLD programming; flash memories; hot carriers; integrated circuit reliability; 0.35 micron; CMOS process; P-channel DINOR flash memory; band-to-band tunneling-induced hot electron programming; current consumption; efficiency; endurance characteristics; oxide reliability; oxide-damage-reduced operation; power consumption; program/erase cycles; scalability; ultra-high programming throughput; window narrowing; window narrowing characteristics; CMOS process; Degradation; Electrons; Energy consumption; Flash memory; Parallel programming; Scalability; Stability; Throughput; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.784186

Filename

784186