Title :
A 1.0-V 230-MHz column access embedded DRAM for portable MPEG applications
Author :
Tomishima, Shigeki ; Tsuji, Takaharu ; Kawasaki, Toshiaki ; Ishikawa, Masatoshi ; Inokuchi, Toshihiro ; Kato, Hiroshi ; Tanizaki, Hiroaki ; Abe, Wataru ; Shibayama, Akinori ; Fukushima, Yoshifumi ; Niiro, Mitsutaka ; Maruta, Masanao ; Uchikoba, Toshitaka
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
11/1/2001 12:00:00 AM
Abstract :
This paper describes a 32-Mb embedded DRAM macro fabricated using 0.13-μm triple-well 4-level Cu embedded DRAM technology, which is suitable for portable equipment of MPEG applications. This macro can operate 230-MHz random column access even at 1.0-V power supply condition. The peak power consumption is suppressed to 198 mW in burst operation. The power-down standby mode, which suppresses the leakage current consumption of peripheral circuitry, is also prepared for portable equipment. With the collaboration of array circuit design and the fine Cu metallization technology, macro size of 18.9 mm2 and cell efficiency of 51.3% are realized even with dual interface and triple test functions implemented
Keywords :
CMOS memory circuits; DRAM chips; cellular arrays; embedded systems; integrated circuit metallisation; low-power electronics; multimedia communication; video codecs; videotelephony; 1 V; 230 MHz; 32 Mbit; CMOS technology; DRAM macro; array circuit design; burst operation; cell efficiency; column access embedded DRAM; dual interface function; fine Cu metallization technology; leakage current consumption; multimedia communication; portable MPEG application; power-down standby mode; suppressed peak power consumption; triple test function; triple-well four-level copper technology; videophone; Circuit testing; Energy consumption; Graphics; HDTV; Low voltage; Multimedia systems; Personal digital assistants; Power supplies; Random access memory; TV;
Journal_Title :
Solid-State Circuits, IEEE Journal of
